vishay siliconix sub75p03-07, sup75p03-07 document number: 71109 s10-2429-rev. e, 25-oct-10 www.vishay.com 1 p-channel 30 v (d-s) 175 c mosfet features ? compliant to rohs directive 2002/95/ec product summary v ds (v) r ds(on) ( ? )i d (a) a - 30 0.007 at v gs = - 10 v 75 0.010 at v gs = - 4.5 v 75 sup75p03-07 sub75p03-07 drain connected to tab to-220ab top view gds to-263 s g top view d ordering information: sub75p03-07 (to-263) sub75p03-07-e3 (to-263, lead (pb)-free) sup75p03-07 (to-220ab) SUP75P03-07-E3 (to-220ab, lead (pb)-free) s g d p-channel mosfet notes: a. package limited. b. duty cycle ? 1 %. c. when mounted on 1" square pcb (fr-4 material). d. see soa curve for voltage derating. * pb containing terminations are not rohs compliant, exemptions may apply. absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit gate-source voltage v gs 20 v continuous drain current (t j = 175 c) t c = 25 c i d - 75 a a t c = 125 c - 65 pulsed drain current i dm - 240 avalanche current i ar - 60 repetitive avalanche energy b l = 0.1 mh e ar 180 mj power dissipation t c = 25 c (to-220ab and to-263) p d 187 d w t a = 25 c (to-263) c 3.75 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount (to-263) c r thja 40 c/w free air (to-220ab) 62.5 junction-to-case r thjc 0.8 a v aila b le rohs* compliant
www.vishay.com 2 document number: 71109 s10-2429-rev. e, 25-oct-10 vishay siliconix sub75p03-07, sup75p03-07 notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications (t j = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = - 250 a - 30 v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1 - 3 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 30 v, v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 125 c - 50 v ds = - 30 v, v gs = 0 v, t j = 175 c - 250 on-state drain current a i d(on) v ds = - ? 5 v, v gs = - 10 v - 120 a drain-source on-state resistance a r ds(on) v gs = - 10 v, i d = - 30 a 0.0055 0.007 ? v gs = - 10 v, i d = - 30 a, t j = 125 c 0.010 v gs = - 10 v, i d = - 30 a, t j = 175 c 0.013 v gs = - 4.5 v, i d = - 20 a 0.008 0.010 forward transconductance a g fs v ds = - 15 v, i d = - 75 a 20 s dynamic b input capacitance c iss v gs = 0 v, v ds = - 25 v, f = 1 mhz 9000 pf output capacitance c oss 1565 reversen transfer capacitance c rss 715 total gate charge c q g v ds = - 15 v, v gs = - 10 v, i d = - 75 a 160 240 nc gate-source charge c q gs 32 gate-drain charge c q gd 30 tu r n - o n d e l ay t i m e c t d(on) v dd = - 15 v, r l = 0.2 ? i d ? - 75 a, v gen = - 10 v, r g = 2.5 ? 25 40 ns rise time c t r 225 360 turn-off delay time c t d(off) 150 240 fall time c t f 210 340 source-drain diode ratings and characteristics b (t c = 25 c) continuous current i s - 75 a pulsed current i sm - 240 forward voltage a v sd i f = - 75 a, v gs = 0 v - 1.2 - 1.5 v reverse recovery time t rr i f = - 75 a, di/dt = 100 a/s 55 100 ns peak reverse recovery current i rm(rec) 2.5 5 a reverse recovery charge q rr 0.07 0.25 c
document number: 71109 s10-2429-rev. e, 25-oct-10 www.vishay.com 3 vishay siliconix sub75p03-07, sup75p03-07 typical characteristics (25 c, unless otherwise noted) output characteristics transconductance capacitance 0 50 100 150 200 250 0246810 v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 v thru 6 v 5 v 3 v 4 v i d - drain current (a) - transconductance (s) g fs 125 c 0 30 60 90 120 150 0 20406080100 25 c t c = - 55 c 0 2000 4000 6000 8000 10 000 12 000 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss transfer characteristics on-resistance vs. drain current gate charge 0 40 80 120 160 200 0123456 v gs - gate-to-source voltage (v) - drain current (a) i d 25 c 125 c t c = - 55 c 0 0.005 0.010 0.015 0.020 0.025 0.030 0 20406080100120 i d - drain current (a) r ds(on) v gs = 10 v v gs = 4.5 v - on-resistance ( ? ) 0 4 8 12 16 20 0 50 100 150 200 250 300 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 15 v i d = 75 a
www.vishay.com 4 document number: 71109 s10-2429-rev. e, 25-oct-10 vishay siliconix sub75p03-07, sup75p03-07 typical characteristics (25 c, unless otherwise noted) on-resistance vs. junction temperature avalanche current vs. time 0 0.3 0.6 0.9 1.2 1.5 1.8 - 50 - 25 0 25 50 75 100 125 150 175 (normalized) - on-resistance t j - junction temperature (c) r ds(on) v gs = 10 v i d = 30 a t in (s) 1000 10 0.00001 0.001 0.1 1 100 (a) i dav 0.01 0.0001 i av (a) at t a = 25 c i av (a) at t a = 150 c 1 0.1 source-drain diode forward voltage drain source breakdown vs. junction temperature 0 0.2 0.4 0.6 0.8 1.0 v sd - source-to-drain voltage (v) - source current (a) i s 100 10 1 t j = 25 c t j = 150 c 25 30 35 40 45 - 50 - 25 0 25 50 75 100 125 150 175 t j - junction temperature (c) (v) v ds i d = 250 a
document number: 71109 s10-2429-rev. e, 25-oct-10 www.vishay.com 5 vishay siliconix sub75p03-07, sup75p03-07 thermal ratings vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71109 . maximum avalanche and drain current vs. case temperature 0 15 30 45 60 75 90 0 25 50 75 100 125 150 175 t c - case temperature (c) - drain current (a) i d safe operating area 1000 1 0.1 1 10 100 0.1 100 - drain current (a) i d 1 ms 100 s t c = 25 c single pulse dc 10 ms 10 limited by r ds(on) * v ds - drain-to-source voltage (v) * v gs minimum v gs at which r ds(on) is specified 100 ms normalized thermal transient impedance, junction-to-case square wave pulse duration (s) 2 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 normalized effective transient thermal impedance 10 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5
package information www.vishay.com vishay siliconix revison: 08-oct-12 1 document number: 71195 for technical questions, contact: hvm@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 to-220ab notes * m = 1.32 mm to 1.62 mm (dim ension including protrusion) heatsink hole for hvm ? xian and mingxin actual photo m * 3 2 1 l l(1) d h(1) q ? p a f j(1) b(1) e(1) e e b c millimeters inches dim. min. max. min. max. a 4.25 4.65 0.167 0.183 b 0.69 1.01 0.027 0.040 b(1) 1.20 1.73 0.047 0.068 c 0.36 0.61 0.014 0.024 d 14.85 15.49 0.585 0.610 e 10.04 10.51 0.395 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 f 1.14 1.40 0.045 0.055 h(1) 6.09 6.48 0.240 0.255 j(1) 2.41 2.92 0.095 0.115 l 13.35 14.02 0.526 0.552 l(1) 3.32 3.82 0.131 0.150 ? p 3.54 3.94 0.139 0.155 q 2.60 3.00 0.102 0.118 ecn: x12-0208-rev. n, 08-oct-12 dwg: 5471
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